Diffusion barriers for copper interconnects

被引：3
|
作者：
Oku, T [1 ]
Mori, H [1 ]
Murakami, M [1 ]
机构：
[1] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICSICT.1998.785863
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thermally stable, thin W2N, TaN, and TaC diffusion barrier layers between Cu and Si were developed by a radiofrequency sputtering, method. The W2N(8nm), TaN(8nm) and TaC(5nm) barrier layers were found to prevent Cu diffusion to Si after annealing at 600, 700, and 600 degrees C for 30min, respectively. From the microstructural and diffusional analyses, the Cu diffusion mechanism through the barrier layers was explained by grain boundary and lattice diffusion.
引用
收藏
页码：238 / 241
页数：2
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