Impact of Pattern Collapse on Future Micro/Nano Fabrication

被引：0
作者：
Liu, Xiao Hu [1 ]
机构：
[1] IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA
来源：
2017 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) | 2017年
关键词：
pattern collapse; low-k dielectric; wet clean; capillarity; van der Waals; finite element simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two mechanical models of pattern collapse, one by capillarity for wet process and the other by van de Waals under dry condition, have been analyzed for 7nm BEOL fine patterns. The effects of the dielectric materials and pattern geometries have been investigated and predictions have been made for future BEOL technology nodes.
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页数：3
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