Asymmetrical diffusion at interfaces of Mg/SiC multilayers

被引：19

作者：

Li, Haochuan ^{[1
]}

Zhu, Jingtao ^{[1
]}

Wang, Zhanshan ^{[1
]}

Song, Zhuqing ^{[1
]}

Chen, Hong ^{[1
]}

机构：

[1] Tongji Univ, Sch Phys Sci & Engn, MOE Key Lab Adv Microstruct Mat, Inst Precis Opt Engn, Shanghai 200092, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2013年 / 3卷 / 05期

基金：

中国国家自然科学基金;

关键词：

THERMAL-STABILITY; NM WAVELENGTH; PERFORMANCE; DEPOSITION; TRANSITION; REGION; VAPOR; MO;

D O I：

10.1364/OME.3.000546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interfacial structure of Mg/SiC multilayers as extreme ultra-violet reflectors was studied along with Mg/Si and Mg/C multilayers by means of x-ray reflectometry, x-ray diffraction, x-ray photoemission spectroscopy, and transmission electron microscopy. The interfacial diffusion in the Mg/SiC multilayer is found asymmetrical as the interlayers formed at SiC-on-Mg interfaces (2.5 nm) are much thicker than those at Mg-on-SiC interfaces (1.0 nm). Contrary asymmetry is found in the Mg/Si and Mg/C multilayers. An explanation of this phenomenon is suggested based on the investigation results. Our findings may result in improved reflectance of Mg/SiC multilayers by inserting diffusion barriers at the more diffused interfaces. (C) 2013 Optical Society of America

引用

页码：546 / 555

页数：10

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