An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 μm SOI Technology

被引：19

作者：

Cho, Moon-Kyu ^{[1
]}

Baek, Donghyun ^{[2
]}

Kim, Jeong-Geun ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Engn, Seoul 139701, South Korea

[2] Chung Ang Univ, Sch Elect Engn, Seoul 156756, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

DPDT switch; phase shifter; phased array antenna; SOI; X-band;

D O I：

10.1109/LMWC.2012.2226209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a 5 b phase shifter using a commercial 0.18 mu m SOI process for X-band phased array antenna. The phase coverage of 360 degrees with the LSB of 11.25 degrees is achieved at 8-12 GHz. The RMS phase error and amplitude variation are less than 6.5 degrees and 0.5 dB, respectively. The measured insertion loss is less than 10.8 dB, and the input and output return losses are over 12 dB at 8-12 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is 1.14 x 0.78 mm(2) excluding pads. To the authors' knowledge, this is the first demonstration of X-band phase shifter using a commercial SOI technology.

引用

页码：648 / 650

页数：3

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