Boosting the On-Current of Si-Based Tunnel Field-Effect Transistors

被引：4

作者：

Verhulst, A. S. ^{[1
]}

Vandenberghe, W. G. ^{[1
,2
]}

Leonelli, D. ^{[1
,2
]}

Rooyackers, R. ^{[1
]}

Vandooren, A. ^{[1
]}

Pourtois, G.

De Gendt, S. ^{[1
,3
]}

Heyns, M. M. ^{[1
,4
]}

Groeseneken, G. ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Chem, B-3001 Leuven, Belgium

[4] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Leuven, Belgium

来源：

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES | 2010年 / 33卷 / 06期

关键词：

FETS;

D O I：

10.1149/1.3487567

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tunnel-FETs (TFETs) have the potential for a sub-60 mV/dec subthreshold swing and therefore allow for scaling the supply voltage beyond the 1 V plateau of metal-oxide-semiconductor FETs (MOSFETs). The latter scaling is a necessary condition for a reduction of the power consumption per transistor. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon results in low on-currents. Therefore, the incorporation of heterostructures is proposed. In particular, a germanium-source silicon-channel n-TFET and, as complementary p-TFET, an indium(gallium) arsenide-source silicon-channel TFET reach on-currents comparable to MOSFETs. To beat the MOSFET performance and allow ultra-low voltage operation, additional performance boosters are required. We analyze the impact of the device configuration and of heterostructure strain. The former is illustrated with experimental data of all-silicon FinFET-based TFETs.

引用

页码：363 / 372

页数：10

共 17 条

[1] Tunnel field effect transistor with increased ON current, low-k spacer and high-k dielectric [J].