Second and third harmonic generation of a hexagonal pyramid quantum dot: impurity position effect

被引：8

作者：

Bahramiyan, H. ^{[1
]}

Servatkhah, M. ^{[1
]}

机构：

[1] Islamic Azad Univ, Marvdasht Branch, Dept Opt & Laser Engn, Marvdasht, Iran

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 08期

关键词：

Hexagonal pyramid quantum dot; Binding energy; SHG; THG; Impurity; INTERSUBBAND OPTICAL-ABSORPTION; REFRACTIVE-INDEX CHANGES; HYDROGENIC IMPURITY; BINDING-ENERGY; HYDROSTATIC-PRESSURE; DONOR IMPURITIES; ELECTRIC-FIELD; WELL-WIRE; STATES; EXCITON;

D O I：

10.1007/s11082-015-0176-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the effect of impurity position on second and third harmonic generation of a hexagonal pyramid quantum dot have investigated. For this purpose, we first have obtained the energy levels and wave functions using finite element method in the presence of impurity. Then, we have studied the influence of impurity location on second harmonic generation (SHG) and third harmonic generation (THG) of a hexagonal pyramid quantum dot. We found that there are two maximum value for SHG and three maximum value for THG at a special impurity position. According to the results, it is deduced that the impurity location plays an important and considerable role in the electronic and optical properties of a hexagonal pyramid quantum dot.

引用

页码：2747 / 2758

页数：12

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