Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide

被引：20
作者：
Repo, Paivikki [1 ]
Benick, Jan [2 ]
von Gastrow, Guillaume [1 ]
Vahanissi, Ville [1 ]
Heinz, Friedemann D. [2 ]
Schoen, Jonas [2 ]
Schubert, Martin C. [2 ]
Savin, Hele [1 ]
机构：
[1] Aalto Univ, Dept Micro & Nanosci, Espoo 02150, Finland
[2] Fraunhofer Inst Solar Energy Syst ISE, Div Solar Cells Dev & Characterizat, D-79110 Freiburg, Germany
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 11期
关键词：
black silicon; surface passivation; boron diffusion; Al2O3; ULTRATHIN AL2O3 FILMS; NONREFLECTING SILICON; SURFACE PASSIVATION; PLASMA; MICRO; ALD;
D O I：
10.1002/pssr.201308096
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nanostructured surface - also called black silicon (b-Si) - is a promising texture for solar cells because of its extremely low reflectance combined with low surface recombination obtained with atomic layer deposited (ALD) thin films. However, the challenges in keeping the excellent optical properties and passivation in further processing have not been addressed before. Here we study especially the applicability of the ALD passivation on highly boron doped emitters that is present in crystalline silicon solar cells. The results show that the nanostructured boron emitters can be passivated efficiently using ALD Al2O3 reaching emitter saturation current densities as low as 51 fA/cm(2). Furthermore, reflectance values less than 0.5% after processing show that the different process steps are not detrimental for the low reflectance of b-Si. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：950 / 954
页数：5
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