Raman efficiency in a planar microcavity

被引：34

作者：

Fainstein, A ^{[1
]}

Jusserand, B ^{[1
]}

ThierryMieg, V ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92225 BAGNEUX,FRANCE

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.53.R13287

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a model for Raman efficiency in a planar microcavity. We calculate the modifications of excitation and emission induced by optical confinement in a 3 lambda/2-thick GaAs/AlAs multiple quantum well grown on a semiconductor-distributed Bragg reflector. Such a structure constitutes a low-finesse asymmetric microcavity. Both excitation and emission are shown to depend strongly on photon frequency, leading to enhancements of up to a factor of 50 for a double resonance process. The cavity-induced Raman efficiency modifications are tested by folded-acoustic- and optical-phonon scattering experiments, finding quantitative accord with theory.

引用

页码：13287 / 13290

页数：4

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