Dielectric properties of Sn2P2S6 crystals as a function of their growth conditions

被引：9

作者：

Maior, MM ^{[1
]}

机构：

[1] Uzhgorod State Univ, UA-294000 Uzhgorod, Ukraine

来源：

PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 08期

关键词：

Spectroscopy; Phase Transition; State Physics; Growth Condition; Dielectric Property;

D O I：

10.1134/1.1130994

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The behavior of the permittivity near a phase transition in Sn2P2S6 crystals of different technological quality is studied. It is established that, in high-resistance crystals, where an internal electric field is formed by the screening of spontaneous polarization in the polar phase, long-time relaxation of epsilon is observed in a temperature range similar to 2 K above T-max. This relaxation and change in the form of the maximum of epsilon'(T) at a phase transition are attributed to an internal electric field induced by the volume space charge formed in regions near the surface. It is established that the existing differences in the properties of Sn2P2S6 crystals are due to deviations from stoichiometry, arising during growth and synthesis of the crystals. (C) 1999 American Institute of Physics. [S1063-7834(99)02208-X].

引用

页码：1333 / 1337

页数：5

共 11 条

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