Real-time direct observation of temperature-dependent domain reversal behavior in epitaxial MnAs film on GaAs(001)

被引：11
作者：
Ryu, KS [1 ]
Shin, SC
Akinaga, H
Manago, T
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Ctr Nanospin Spintron Mat, Taejon 305701, South Korea
[3] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058562, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期
关键词：
D O I：
10.1063/1.2189016
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated temperature-dependent domain reversal behavior in the MnAs film epitaxially grown on GaAs(001) using a magneto-optical microscope capable of real-time direct observation of domain evolution. Interestingly enough, the domain reversal in the temperature range of 20 degrees C similar to 35 degrees C shows the domain wall-motion process with the sawtooth type and, then, it changes to the nucleation-dominant process above 37.5 degrees C. This change could be understood by the decrease of the dipolar interaction energy and the disconnection of the ferromagnetic alpha-MnAs stripes, induced by the decrease of the alpha-MnAs volume ratio with increasing temperature. (c) 2006 American Institute of Physics.
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