Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

被引：72
作者：
Backen, E. [1 ]
Haindl, S. [1 ]
Niemeier, T. [1 ]
Huehne, R. [1 ]
Freudenberg, T. [1 ]
Werner, J. [2 ]
Behr, G. [2 ]
Schultz, L. [1 ]
Holzapfel, B. [1 ]
机构：
[1] IFW Dresden, Inst Met Mat, D-01171 Dresden, Germany
[2] IFW Dresden, Inst Solid State Res, D-01171 Dresden, Germany
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2008年 / 21卷 / 12期
关键词：
D O I：
10.1088/0953-2048/21/12/122001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
LaFeAsO(1-x)F(x) thin films were deposited successfully on (001)-oriented LaAlO(3) and MgO substrates from stoichiometric LaFeAsO(1-x)F(x) polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and the onset of superconductivity at 11 K. mu(0)H(c2)(T) was determined by resistive measurements and yield mu(0)H(c2) values of 3 T at 3.6 K for mu(0)H parallel to c and 6 T at 6.4 K for mu(0)H parallel to ab.
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页数：4
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