Surface phonon polariton characteristic of honeycomb nanoporous GaN thin films

被引：18

作者：

Cheah, S. F. ^{[1
]}

Lee, S. C. ^{[1
,2
]}

Ng, S. S. ^{[1
]}

Yam, F. K. ^{[1
]}

Abu Hassan, H. ^{[1
]}

Hassan, Z. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

[2] Univ Malaya, Dept Phys, Fac Sci, Kuala Lumpur 50603, Malaysia

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期

关键词：

POROUS GAN; OPTICAL-PROPERTIES; TOTAL-REFLECTION; SEMICONDUCTORS; EXCITATIONS; MORPHOLOGY; SAPPHIRE; SPECTRA; GROWTH; RAMAN;

D O I：

10.1063/1.4794906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoporous GaN thin films with honeycomb structure were fabricated via ultra-violet assisted electrochemical etching approach. Under different anodization voltages, two nanoporous samples with different porosity were fabricated. Porosity and surface phonon polariton (SPP) characteristics of the fabricated samples were investigated using polarized infrared attenuated total reflection technique. It was found that the porosity of nanoporous GaN has great influence on its SPP resonant frequency. It can modulate the resonance frequency towards lower value. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794906]

引用

页数：5

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