Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up

被引：19

作者：

Webster, Eric A. G. ^{[1
]}

Grant, Lindsay A. ^{[2
]}

Henderson, Robert K. ^{[1
]}

机构：

[1] Univ Edinburgh, Sch Engn, Inst Integrated Micro & Nano Syst, Edinburgh EH9 3JL, Midlothian, Scotland

[2] STMicroelect R&D Ltd, Edinburgh EH12 7BF, Midlothian, Scotland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 03期

关键词：

Avalanche breakdown; avalanche photodiodes; CMOS; single-photon avalanche diodes (SPADs); technology computer-aided design (TCAD); P-N-JUNCTIONS; AUGER RECOMBINATION; SILICON; CMOS; DETECTOR; ELECTRON; MODEL;

D O I：

10.1109/TED.2013.2243152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations calibrated with measured results. The SPAD's transient I-V curve is reported and is found to have negative differential resistance behavior that is unlike steady state. The quenching process is discussed with reference to power supply decoupling. It is found that minority carriers involved in SPAD breakdown play an important role in device performance and provide insight into a trapless after-pulsing mechanism. The influence of the parasitic bipolar transistor present in planar SPADs is analyzed. The bipolar is found to be responsible for a SPAD latch-up failure mechanism and potentially additional after pulsing. Design methods and bias possibilities for mitigating the influence of the parasitic bipolar are discussed.

引用

页码：1188 / 1194

页数：7

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