Second-harmonic generation in silicon carbide polytypes

被引：46

作者：

Niedermeier, S ^{[1
]}

Schillinger, H

Sauerbrey, R

Adolph, B

Bechstedt, F

机构：

[1] Univ Jena, D-07743 Jena, Germany

[2] Inst Opt & Quantenelektron, Jena, Germany

[3] Inst Festkorpertheorie & Theoret Opt, Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.124459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report simultaneous measurements and ab initio calculations of the second-order nonlinear coefficients for SiC polytypes. Our measured values for chi(zzz) (chi(zxx)) are 18 (-4) pm/V for 4H SiC and 24 (-4) pm/V for 6H SiC. They are in good agreement with our theoretical results. (C) 1999 American Institute of Physics. [S0003-6951(99)00531-8].

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页码：618 / 620

页数：3

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