Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

被引:47
作者
Cao, Yaming [1 ]
Zhang, Bin [1 ]
Tian, Xiangyu [1 ]
Gu, Minchao [1 ]
Chen, Yu [1 ]
机构
[1] East China Univ Sci & Technol, Inst Appl Chem, Sch Chem & Mol Engn, Key Lab Adv Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China
基金
中国国家自然科学基金;
关键词
IN-SITU SYNTHESIS; GRAPHENE; BEHAVIOR; LAYER; RED;
D O I
10.1039/c8nr09711a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Delta vertical bar V-ON - V-OFF vertical bar), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9yl) aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4-, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>10(7)) and low switch-on/off voltages (-0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Delta vertical bar V-ON - V-OFF vertical bar value are found to be 3 x 10(3) and 5.47 (Delta vertical bar+2.53-2.94 vertical bar), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.
引用
收藏
页码:3527 / 3533
页数:7
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