Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs

被引：0
作者：
Kim, SangHyeon [1 ]
Kim, Seong Kwang [1 ]
Shin, SangHoon [2 ]
Han, Jae-Hoom [1 ]
Grum, Dae-Myeong [1 ]
Shim, Jae-Phil [1 ]
Lee, Subin [1 ]
Kim, Han Sung [1 ]
Ju, Gunwu [1 ]
Song, Jin Dong [1 ]
Alam, Muhammad A. [2 ]
Kim, Hyung-jun [1 ]
机构：
[1] KIST, Seoul, South Korea
[2] Purdue Univ, Dept ECE, W Lafayette, IN 47907 USA
来源：
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年
基金：
新加坡国家研究基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Contact Resistance Reduction Using Dielectric Materials of Nanoscale Thickness on Silicon for Monolithic 3D Integration
    Kim, Seung-Hwan
    Kim, Gwang-Sik
    Oh, Seyong
    Park, Jin-Hong
    Yu, Hyun-Yong
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (12) : 12764 - 12767
  • [22] Heat management in monolithic 3D RF platform
    Jeong, Jaeyong
    Kim, Seong Kwang
    Kim, Jongmin
    Geum, Dae-Myeong
    Kim, SangHyeon
    [J]. 6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), 2022, : 79 - 81
  • [23] 3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration
    Wood, B.
    McDougall, B.
    Chan, O.
    Dent, A.
    Ni, C. -N.
    Hung, R.
    Chen, H.
    Xu, P.
    Nguyen, P.
    Okazaki, M.
    Mao, D.
    Xu, X.
    Ramirez, R.
    Cai, M. -P.
    Jin, M.
    Lee, W.
    Noori, A.
    Shek, M.
    Chang, C. -P.
    [J]. SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS, 2011, 35 (02): : 69 - 81
  • [24] Monolithic 3D Integration Process and Its Device Applications
    Choi, Changhwan
    [J]. 6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), 2022, : 76 - 78
  • [25] Monolithic 3D Integration: A Path From Concept To Reality
    Shulaker, Max M.
    Wu, Tony F.
    Sabry, Mohamed M.
    Wei, Hai
    Wong, H. -S. Philip
    Mitra, Subhasish
    [J]. 2015 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), 2015, : 1197 - 1202
  • [26] Direct Bonding: a Key Enabler for 3D Monolithic Integration
    Brunet, L.
    Batude, P.
    Fournel, F.
    Benaissa, L.
    Fenouillet-Beranger, C.
    Pasini, L.
    Deprat, F.
    Previtali, B.
    Ponthenier, F.
    Seignard, A.
    Euvrard-Colnat, C.
    Rivoire, M.
    Besson, P.
    Arvet, C.
    Beche, E.
    Rozeau, O.
    Billoint, O.
    Turkyilmaz, O.
    Clermidy, F.
    Signamarcheix, T.
    Vinet, M.
    [J]. SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2014, 64 (05): : 381 - 390
  • [27] 3D monolithic integration: Technological challenges and electrical results
    Vinet, M.
    Batude, P.
    Tabone, C.
    Previtali, B.
    LeRoyer, C.
    Pouydebasque, A.
    Clavelier, L.
    Valentian, A.
    Thomas, O.
    Michaud, S.
    Sanchez, L.
    Baud, L.
    Roman, A.
    Carron, V.
    Nemouchi, F.
    Mazzocchi, V.
    Grampeix, H.
    Amara, A.
    Deleonibus, S.
    Faynot, O.
    [J]. MICROELECTRONIC ENGINEERING, 2011, 88 (04) : 331 - 335
  • [28] First Demonstration of 3D SRAM Through 3D Monolithic Integration of InGaAs n-FinFETs on FDSOI Si CMOS with Inter-layer Contacts
    Deshpande, V.
    Hahn, H.
    O'Connor, E.
    Baumgartner, Y.
    Sousa, M.
    Caimi, D.
    Boutry, H.
    Widiez, J.
    Brevard, L.
    Le Royer, C.
    Vinet, M.
    Fompeyrine, J.
    Czornomaz, L.
    [J]. 2017 SYMPOSIUM ON VLSI TECHNOLOGY, 2017, : T74 - T75
  • [29] InGaAs 3D MOSFETs with Drastically Different Shapes Formed by Anisotropic Wet Etching
    Zhang, J.
    Si, M.
    Lou, X. B.
    Wu, W.
    Gordon, R. G.
    Ye, P. D.
    [J]. 2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
  • [30] Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration
    Mao, Shujuan
    Gao, Jianfeng
    He, Xiaobin
    Liu, Weibing
    Liu, Jinbiao
    Wang, Guilei
    Zhou, Na
    Luo, Yanna
    Cao, Lei
    Zhang, Ran
    Liu, Haochen
    Li, Xun
    Li, Yongliang
    Wu, Zhenhua
    Li, Junfeng
    Luo, Jun
    Zhao, Chao
    Wang, Wenwu
    Yin, Huaxiang
    [J]. NANOMATERIALS, 2022, 12 (07)
12345