Q-Optimized lateral free-free beam micromechanical resonators

被引：0

作者：

Hsu, WT ^{[1
]}

Clark, JR ^{[1
]}

Nguyen, CTC ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Wireless Integrated Microsyst, Ann Arbor, MI 48109 USA

来源：

TRANSDUCERS '01: EUROSENSORS XV, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2 | 2001年

关键词：

resonator; high-Q; lateral; oscillator;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

Laterally vibrating free-free beam micromechanical resonators have been demonstrated that utilize second-mode flexural supports and optimal dc-bias application to suppress anchor dissipation and thereby attain Q's greater than 10,000 at 10.47 MHz, while eliminating some of the key deficiencies associated with previous vertical-mode resonators. In addition to demonstrating lateral FF-beams, this work utilizes these resonators to quantify the degree to which the use of energy isolating supports actually influences the Q of this device.

引用

页码：1110 / 1113

页数：4