Nanovoid-related large redshift of photoluminescence peak energy in hydrogenated amorphous silicon

被引:10
作者
Han, DX [1 ]
Yue, GZ
Wang, KD
Baugh, J
Wu, Y
Xu, YQ
Wang, Q
机构
[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.1431396
中图分类号
O59 [应用物理学];
学科分类号
摘要
A large redshift of the photoluminescence (PL) peak energy is found in hydrogenated amorphous silicon films prepared by hot-wire chemical-vapor deposition with a high-growth rate greater than or equal to 50 Angstrom /s. The PL intensity is as high as that in the standard film and its temperature dependence shows thermalization behavior. The origin of the redshift is clarified by employing H-1 nuclear magnetic resonance and mass density measurements. A similar to2% volume fraction of tube-like nanoscale voids is identified. The long spin-lattice relaxation time of H-2 in the nanovoids implies a negligible density of silicon dangling bonds on the nanovoid surfaces. We suggest that highly strained bonds on these surfaces form broad conduction-band tail states that are responsible for the PL redshift. (C) 2002 American Institute of Physics.
引用
收藏
页码:40 / 42
页数:3
相关论文
共 11 条
  • [1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES
    ABELES, B
    TIEDJE, T
    [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006
  • [2] Confinement effect on dipole-dipole interactions in nanofluids
    Baugh, J
    Kleinhammes, A
    Han, DX
    Wang, Q
    Wu, Y
    [J]. SCIENCE, 2001, 294 (5546) : 1505 - 1507
  • [3] Magnetic susceptibility and microstructure of hydrogenated amorphous silicon measured by nuclear magnetic resonance on a single thin film
    Baugh, J
    Han, DX
    Kleinhammes, A
    Wu, Y
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (04) : 466 - 468
  • [4] Dresselhaus M. S., 1996, SCI FULLERENES CARBO
  • [5] A molecular dynamics study of band tails in a-Si:H
    Fedders, PA
    Drabold, DA
    [J]. AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 403 - 408
  • [6] Molecular hydrogen in α-Si:H
    Fedders, PA
    Leopold, DJ
    Chan, PH
    Borzi, R
    Norberg, RE
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (02) : 401 - 404
  • [7] QUANTIZED ELECTRON-TRANSPORT IN AMORPHOUS-SILICON MEMORY STRUCTURES
    HAJTO, J
    OWEN, AE
    GAGE, SM
    SNELL, AJ
    LECOMBER, PG
    ROSE, MJ
    [J]. PHYSICAL REVIEW LETTERS, 1991, 66 (14) : 1918 - 1921
  • [8] Optical and electronic properties of microcrystalline silicon as a function of microcrystallinity
    Han, DX
    Yue, GZ
    Lorentzen, JD
    Lin, J
    Habuchi, H
    Wang, Q
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1882 - 1888
  • [9] Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s
    Mahan, AH
    Xu, Y
    Nelson, BP
    Crandall, RS
    Cohen, JD
    Palinginis, KC
    Gallagher, AC
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (24) : 3788 - 3790
  • [10] Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 A/s
    Mahan, AH
    Xu, Y
    Williamson, DL
    Beyer, W
    Perkins, JD
    Vanecek, M
    Gedvilas, LM
    Nelson, BP
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) : 5038 - 5047