Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

被引：60

作者：

Casadei, Alberto ^{[1
]}

Krogstrup, Peter ^{[2
,3
]}

Heiss, Martin ^{[1
]}

Rohr, Jason A. ^{[2
,3
]}

Colombo, Carlo ^{[1
]}

Ruelle, Thibaud ^{[1
]}

Upadhyay, Shivendra ^{[2
,3
]}

Sorensen, Claus B. ^{[2
,3
]}

Nygard, Jesper ^{[2
,3
]}

Fontcuberta i Morral, Anna ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Mat, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[2] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[3] Univ Copenhagen, Niels Bohr Inst, Ctr Quantum Devices, DK-2100 Copenhagen, Denmark

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

基金：

瑞士国家科学基金会; 欧洲研究理事会;

关键词：

PHOTOVOLTAIC APPLICATIONS; SILICON; DIFFUSION; BERYLLIUM; EPITAXY; GROWTH; VAPOR;

D O I：

10.1063/1.4772020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also show that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772020]

引用

页数：4

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