Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Raman-scattering measurements

被引：0

作者：

Tiras, Engin ^{[1
]}

机构：

[1] Anadolu Univ, Dept Phys, Fac Sci, TR-26470 Eskisehir, Turkey

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2012年 / 14卷 / 9-10期

关键词：

GaN heterostructure; Raman spectra; Electron effective mass; Phonon-plasmon coupled-mode; PLASMON COUPLED MODES; GAS; BAND;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon-plasmon coupled-mode line-shape analysis of vibrational spectroscopy measurements. The vibrational properties of AlGaN/AlN/GaN heterostructures were studied using Raman scattering spectroscopy at room temperature. 532 nm (2.33 eV) was used as the excitations in the Raman scattering measurement. The effective mass obtained from the Raman scattering spectroscopy is in good agreement with the current results in the literature.

引用

页码：787 / 791

页数：5

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