A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

被引：97

作者：

Jacunski, MD

Shur, MS

Owusu, AA

Ytterdal, T

Hack, M

Iñíguez, B

机构：

[1] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

[3] DpiX, Palo Alto, CA 94302 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

I-V model; kink effect; poly-Si TFT; short-channel effect; temperature effects;

D O I：

10.1109/16.766877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semi-empirical analytical model for the DC characteristics of both n- and p-channel polysilicon thin-film transistors is described. The model is suitable for implementation in a SPICE circuit simulator, Our semi-empirical approach results in a physically based model with a minimum of parameters, which are readily related to the device structure and fabrication process. The intrinsic DC model describes all four regimes of operation: leakage, subthreshold, above threshold, and kink, The effects of temperature and channel length are also included in the short-channel model.

引用

页码：1146 / 1158

页数：13

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