Infrared absorption of Li acceptors and shallow donors in ZnSe

被引：12

作者：

Nakata, H ^{[1
]}

Yamada, K ^{[1
]}

Ohyama, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Osaka 5600043, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using Fourier transform infrared spectroscopy, we have observed the absorption spectra of holes bound to acceptors in bulk ZnSe below 100 K. The absorption is assigned to hole transition of Li acceptors from the 1S(3/2) ground state to the 2P(3/2) excited state. The obtained transition energy of 72.9+/-0.1 meV is one order more precise than that obtained by photoluminescence measurements. In addition, absorption lines due to shallow donors are observed below 30 K, and the intensity is enhanced by excitation with a blue light emitting diode. The 1s-2p transition energies of three kinds of donors Al, Cl, and In are estimated at 18.96, 19.64, and 21.67 meV, respectively. (C) 1999 American Institute of Physics. [S0003-6951(99)02523-1].

引用

页码：3480 / 3482

页数：3

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