Optical properties of InxGa1-xAs/GaAs MQW structures on (111)B GaAs grown by MBE:: dependence on substrate miscut

Two series of InGaAs/GaAs PIN-MOW have been grown on two (111)B GaAs off-axis substrates under optimised growth conditions for simultaneous growth in order to contrast differences in the optoelectronic properties of the layers on these different substrates. Results indicate a photoluminescence (PL) emission dependence on the substrate used, being stronger for highly strained systems. In order to determine the source of this dependence, samples have been studied by planar view transmission electron microscopy (PVTEM). Relaxation mechanisms seem to behave in a different way with regard to the substrate used. These two characterization techniques (PL and PVTEM) are correlated in order to give an explanation of the differences in optical properties found in layers with the same strain-thickness product grown simultaneously on different substrate orientations. (C) 1999 Elsevier Science B.V. All rights reserved.