Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation

被引：26

作者：

Zhang, Ke ^{[1
]}

Li, Simian ^{[2
]}

Liang, Guangfei ^{[1
]}

Huang, Huan ^{[1
]}

Wang, Yang ^{[1
]}

Lai, Tianshu ^{[2
]}

Wu, Yiqun ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China

[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Dept Phys, Guangzhou 510275, Guangdong, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Phase-change material; Nanosecond laser pulse; Picosecond laser pulse; Crystallization; Extra-non-equilibrium process; THIN-FILMS; DATA-STORAGE; TEMPERATURE; TRANSITIONS;

D O I：

10.1016/j.physb.2012.03.044

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The crystallization dynamics of as-deposited amorphous Ge2Sb2Te5 films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2447 / 2450

页数：4

共 28 条

[1] FAST-CRYSTALLIZING SB-BASED THIN-FILMS UNDER PICOSECOND AND NANOSECOND LASER-PULSES [J].