Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition

被引：5

作者：

Ohshima, T ^{[1
]}

Moriguchi, H ^{[1
]}

Shigemasa, R ^{[1
]}

Goto, S ^{[1
]}

Tsunotani, M ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

InAlAs; Schottky characteristics; MOCVD; reverse current; deep trap;

D O I：

10.1143/JJAP.38.1161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition (MOCVD) have been evaluated. InAlAs Schottky characteristics are strongly affected by MOCVD growth temperature. The reverse current of InAlAs frown at 700 degrees C is more than one order of magnitude larger than that at 750 degrees C. From deep-level transient spectroscopy (DLTS) measurements, electron traps with activation energies of 0.45, 0.33 and 0.15 eV have been observed in InAlAs grown at 700 degrees C. The results of C-V, Hall and secondary ion mass spectrometry (SIMS) measurements suggest that the trap is acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs frown at 700 degrees C is believed to be due to the conduction through the trap.

引用

页码：1161 / 1163

页数：3

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