Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications

被引:50
作者
Hara, Kosuke O. [1 ,2 ]
Nakagawa, Yoshihiko [1 ]
Suemasu, Takashi [2 ,3 ]
Usami, Noritaka [1 ,2 ]
机构
[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[2] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Chiyoda Ku, Tokyo 1020076, Japan
[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
基金
日本科学技术振兴机构;
关键词
MOLECULAR-BEAM EPITAXY; POLYCRYSTALLINE BASI2; ORTHORHOMBIC BASI2; ION-IMPLANTATION; THIN-FILMS; SI(111); GROWTH; FABRICATION; MECHANISM; BARIUM;
D O I
10.7567/JJAP.54.07JE02
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have realized BaSi2 films by a simple vacuum evaporation technique for solar cell applications. X-ray diffraction analysis shows that single-phase BaSi2 films are formed on alkali-free glass substrates at 500 and 600 degrees C while impurity phases coexist on quartz or soda-lime glass substrates or at a substrate temperature of 400 degrees C. The mechanism of film growth is discussed by analyzing the residue on the evaporation boat. An issue on the fabricated films is cracking due to thermal mismatch, as observed by secondary electron microscopy. Optical characterizations by transmittance and reflectance spectroscopy show that the evaporated films have high absorption coefficients, reaching 2 x 10(4) cm(-1) for a photon energy of 1.5 eV, and have indirect absorption edges of 1.14-1.21 eV, which are suitable for solar cells. The microwave-detected photoconductivity decay measurement reveals that the carrier lifetime is approximately 0.027 mu s, corresponding to the diffusion length of 0.84 mu m, which suggests the potential effective usage of photoexcited carriers. (C) 2015 The Japan Society of Applied Physics
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页数:5
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