3.5W CW operation of quantum dot laser

被引：52
|
作者：
Kovsh, AR
Zhukov, AE
Livshits, DA
Egorov, AY
Ustinov, VM
Maximov, MV
Musikhin, YG
Ledentsov, NN
Kop'ev, PS
Alferov, ZI
Bimberg, D
机构：
[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 14期
关键词：
D O I：
10.1049/el:19990813
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaAs/GaAs diode lasers with the active region based on a dense array of self-organised InAlAs-InAs quantum dots have been fabricated. 3.5W output power for both facets with a peak conversion efficiency of 45% in a 100 mu m-wide stripe with uncoated facets were obtained.
引用
收藏
页码：1161 / 1163
页数：3
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