3.5W CW operation of quantum dot laser

被引：52

作者：

Kovsh, AR

Zhukov, AE

Livshits, DA

Egorov, AY

Ustinov, VM

Maximov, MV

Musikhin, YG

Ledentsov, NN

Kop'ev, PS

Alferov, ZI

Bimberg, D

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 14期

关键词：

D O I：

10.1049/el:19990813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/GaAs diode lasers with the active region based on a dense array of self-organised InAlAs-InAs quantum dots have been fabricated. 3.5W output power for both facets with a peak conversion efficiency of 45% in a 100 mu m-wide stripe with uncoated facets were obtained.

引用

页码：1161 / 1163

页数：3

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