Preparation and properties of PTCR ceramics with low resistivity sintered at low temperature

被引:25
|
作者
Huang, ZZ [1 ]
Adikary, SU
Chan, HLW
Choy, CL
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Hunghom, Hong Kong, Peoples R China
[3] Hong Kong Polytech Univ, Ctr Mat Res, Hunghom, Hong Kong, Peoples R China
关键词
D O I
10.1023/A:1014879917445
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two types of positive temperature coefficient of resistance (PTCR) ceramics with relatively low room-temperature resistivity were prepared using the four-component system (Ba, Sr, Ca, Pb)TiO3 with lanthanum oxide (La2O3) as the donor dopant and boron nitride (BN) as the sintering aid. The first type of materials was sintered at 1080 degreesC for 2 h. It has a Curie point T(c)similar to 120 C-degrees, a room-temperature resistivity rho(v) of 58 Omega cm and a resistivity jump Deltarho of 3 x 10(4) Omega cm around T-c. For the second type of materials that were sintered at 1100 degreesC for 20 min, T(c)similar to 120 C-degrees, rho(v) = 19 Omega cm and Deltarho = 10(4) Omegacm. These PTCR ceramics are considered to be suitable materials for fabricating multilayer PTCR devices by the co-firing process. Factors associated with the composition that influence the PTCR property of the materials are discussed. (C) 2002 Kluwer Academic Publishers.
引用
收藏
页码:221 / 224
页数:4
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