Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at similar to 328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at similar to 328 nm along with appearance of a new peak at similar to 437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 degrees C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 degrees C after deposition provide a smooth and flat texture suited for optoelectronic applications.