Effect of pressure on spin-orbit interaction in a quantum wire with V-shaped cross section

被引:24
|
作者
Khordad, R. [1 ]
机构
[1] Univ Yasuj, Coll Sci, Dept Phys, Yasuj 75914353, Iran
关键词
Spin-orbit interaction; Quantum wire; Pressure; TILTED MAGNETIC-FIELDS; IMPURITY STATES; HYDROSTATIC-PRESSURE; HYDROGENIC IMPURITY; GAAS; WELL; ELECTRON; RINGS; DOTS; HETEROSTRUCTURES;
D O I
10.1016/j.solidstatesciences.2013.02.007
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
In the present work, we have considered a GaAs/Ga1-xAlxAs V-shaped quantum wire with a hydrogenic donor impurity at the center. First, the Schrodinger equation is analytically solved without the impurity. Second, we have used variational approximation to obtain the ground state binding energy. Third, the spin orbit interaction (SOI) is studied by the perturbation theory. We also have investigated the effect of pressure on the binding energy and SOI in this quantum wire. According to the obtained results, it is found that i) the binding energy increases with increasing pressure, ii) the level splitting increases by increasing pressure, iii) the splitting decreases with increasing wire size. (C) 2013 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:63 / 68
页数:6
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