Effect of pressure on spin-orbit interaction in a quantum wire with V-shaped cross section

In the present work, we have considered a GaAs/Ga1-xAlxAs V-shaped quantum wire with a hydrogenic donor impurity at the center. First, the Schrodinger equation is analytically solved without the impurity. Second, we have used variational approximation to obtain the ground state binding energy. Third, the spin orbit interaction (SOI) is studied by the perturbation theory. We also have investigated the effect of pressure on the binding energy and SOI in this quantum wire. According to the obtained results, it is found that i) the binding energy increases with increasing pressure, ii) the level splitting increases by increasing pressure, iii) the splitting decreases with increasing wire size. (C) 2013 Elsevier Masson SAS. All rights reserved.