In this present work, the effects of the structure parameters such as the right-well width and the rightbarrier height on the linear, third-order nonlinear and total absorption and refractive index changes of asymmetric double semi-V-shaped quantum well are theoretically studied by using the compact-density matrix approach and iterative method. The electronic structure of this system is obtained by solving Schrodinger equation within the framework of effective mass approximation. Numerical results are presented for a typical GaAs/AlxGa1-xAs asymmetric double semi-V-shaped quantum well. The obtained results show that the right-well width and the right-barrier height have great effects on the optical characteristics of these structures. (C) 2015 Elsevier B.V. All rights reserved.
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Thu Dau Mot Univ, Inst Appl Technol, Thu Dau Mot, Binh Duong Prov, VietnamThu Dau Mot Univ, Inst Appl Technol, Thu Dau Mot, Binh Duong Prov, Vietnam
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Sivas Cumhuriyet Univ, Fac Engn, Dept Nanotechnol Engn, TR-58140 Sivas, TurkeySivas Cumhuriyet Univ, Fac Engn, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
Sayrac, M.
Turkoglu, A.
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机构:Sivas Cumhuriyet Univ, Fac Engn, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
Turkoglu, A.
Mora-Ramos, M. E.
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Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Ave Univ 1001, Cuernavaca 62209, Morelos, MexicoSivas Cumhuriyet Univ, Fac Engn, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
Mora-Ramos, M. E.
Ungan, F.
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Sivas Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, TurkeySivas Cumhuriyet Univ, Fac Engn, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
机构:
Duy Tan Univ, Inst Res & Dev, Da Nang 550000, VietnamTon Duc Thang Univ, Adv Inst Mat Sci, Lab Magnetism & Magnet Mat, Ho Chi Minh City, Vietnam
Hieu, Nguyen N.
Phuc, Huynh, V
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Dong Thap Univ, Div Theoret Phys, Cao Lanh 870000, VietnamTon Duc Thang Univ, Adv Inst Mat Sci, Lab Magnetism & Magnet Mat, Ho Chi Minh City, Vietnam