Growth Study of Ion Assisted Evaporated Molybdenum Thin Films

被引：0

作者：

Yadav, P. K. ^{[1
]}

Nayak, M. ^{[1
]}

Lodha, G. S. ^{[1
]}

Rai, S. ^{[1
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Ind Synchrotrons Utilizat Div, Xray Opt Sect, Indore 452013, Madhya Pradesh, India

来源：

INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷

关键词：

Thin film growth; Ion assisted electron beam evaporation; X-ray reflectivity; Microstructural analysis;

D O I：

10.1063/1.4732395

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We reported optimization of ion-to-atom ratios and ion energy for growth of molybdenum thin film on oxidized silicon substrate using ion assisted electron beam evaporation system. The ion-to-atom ratio is varied by independently adjusting the ion current density and deposition rate. The structural characterization of the films is carried out by hard X-ray reflectivity. We observed improvement in film density from 85.5% to 98.2% and film roughness from similar to 2 nm to 0.84nm on similar to 26 nm thick Mo film by optimizing ion parameters. The observed results are discussed considering the effect of kinetic of adatoms during growth of film.

引用

页码：145 / 147

页数：3

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