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Growth Study of Ion Assisted Evaporated Molybdenum Thin Films
被引:0
|作者:
Yadav, P. K.
[1
]
Nayak, M.
[1
]
Lodha, G. S.
[1
]
Rai, S.
[1
]
机构:
[1] Raja Ramanna Ctr Adv Technol, Ind Synchrotrons Utilizat Div, Xray Opt Sect, Indore 452013, Madhya Pradesh, India
来源:
INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY
|
2012年
/
1451卷
关键词:
Thin film growth;
Ion assisted electron beam evaporation;
X-ray reflectivity;
Microstructural analysis;
D O I:
10.1063/1.4732395
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We reported optimization of ion-to-atom ratios and ion energy for growth of molybdenum thin film on oxidized silicon substrate using ion assisted electron beam evaporation system. The ion-to-atom ratio is varied by independently adjusting the ion current density and deposition rate. The structural characterization of the films is carried out by hard X-ray reflectivity. We observed improvement in film density from 85.5% to 98.2% and film roughness from similar to 2 nm to 0.84nm on similar to 26 nm thick Mo film by optimizing ion parameters. The observed results are discussed considering the effect of kinetic of adatoms during growth of film.
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页码:145 / 147
页数:3
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