Growth Study of Ion Assisted Evaporated Molybdenum Thin Films

We reported optimization of ion-to-atom ratios and ion energy for growth of molybdenum thin film on oxidized silicon substrate using ion assisted electron beam evaporation system. The ion-to-atom ratio is varied by independently adjusting the ion current density and deposition rate. The structural characterization of the films is carried out by hard X-ray reflectivity. We observed improvement in film density from 85.5% to 98.2% and film roughness from similar to 2 nm to 0.84nm on similar to 26 nm thick Mo film by optimizing ion parameters. The observed results are discussed considering the effect of kinetic of adatoms during growth of film.