Photonic band gap and defects modes in inorganic/organic photonic crystal based on Si and HMDSO layers deposited by sputtering and PECVD

被引：16

作者：

Amri, R. ^{[1
,2
,3
]}

Sahel, S. ^{[1
,2
]}

Gamra, D. ^{[1
]}

Lejeune, M. ^{[2
]}

Clin, M. ^{[2
]}

Zellama, K. ^{[2
]}

Bouchriha, H. ^{[1
]}

机构：

[1] Univ Tunis El Manar, Fac Sci Tunis, Lab Mat Avances & Phenomenes Quant, Campus Univ, Tunis 1068, Tunisia

[2] Univ Picardie Jules Verne, UFR Sci, Lab Phys Mat Condensee, 33 Rue St Leu, F-80039 Amiens, France

[3] Univ Arabe Sci, Ecole Super Ingn & Etud Technol, Tunis 1002, Tunisia

来源：

OPTICAL MATERIALS | 2018年 / 76卷

关键词：

Photonic crystals; Photonic band gap materials; Sputtering; PECVD; Hexamethyldisiloxane (HMDSO); SPONTANEOUS EMISSION; THIN-FILMS; MIXTURE; SILICON;

D O I：

10.1016/j.optmat.2017.12.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hybrid inorganic/organic one dimensional photonic crystal based on alternating layers of Si/HMDSO is elaborated. The inorganic silicon is deposited by radiofrequency magnetron sputtering and the organic HMDSO is deposited by PECVD technique. As the Si refractive index is n = 3.4, and the refractive index of HMDSO layer depend on the deposition conditions, to get a photonic crystal with high and low refractive index presenting a good contrast, we have varied the radiofrequency power of PECVD process to obtain HMDSO layer with low refractive index (n = 1.45). Photonic band gap of this hybrid structure is obtained from the transmission and reflection spectra and appears after 9 alternative layers of Si/HMDSO. The introduction of defects in our photonic crystal leads to the emergence of localized modes within the photonic band gap. Our results are interpreted by using a theoretical model based on transfer matrix. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：222 / 230

页数：9

共 33 条

[1] Remote AP-PECVD of silicon dioxide films from hexamethyldisiloxane (HMDSO) [J].