Excitation dependent photoluminescence study of Si-rich a-SiNx:H thin films

被引：24

作者：

Bommali, Ravi Kumar ^{[1
]}

Singh, Sarab Preet ^{[1
]}

Rai, Sanjay ^{[2
]}

Mishra, P. ^{[3
]}

Sekhar, B. R. ^{[3
]}

Prakash, G. Vijaya ^{[1
]}

Srivastava, P. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Nanostech & Nanophoton Labs, New Delhi 110016, India

[2] Raja Ramanna Ctr Adv Technol, Ind Synchrotons Utilisat Div, Indore 452013, India

[3] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 12期

关键词：

SILICON-NITRIDE FILMS; QUANTUM DOTS; NANOCRYSTALS; LIGHT; STATES;

D O I：

10.1063/1.4770375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 degrees C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed. (c) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770375]

引用

页数：6

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