Stabilization of p-type dopant nitrogen in BeZnO ternary alloy epitaxial thin films

被引：20

作者：

Chen, Mingming ^{[1
]}

Xiang, Rong ^{[1
]}

Su, Longxing ^{[1
]}

Zhang, Quanlin ^{[1
]}

Cao, Jiashi ^{[1
]}

Zhu, Yuan ^{[1
]}

Gui, Xuchun ^{[1
]}

Wu, Tianzhun ^{[1
]}

Tang, Zikang ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 45期

基金：

美国国家科学基金会;

关键词：

HYDROGEN;

D O I：

10.1088/0022-3727/45/45/455101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the growth of BexZn1-xO alloy thin films on c-sapphire substrates by plasma-assisted molecular beam epitaxy. The formation of BexZn1-xO is very sensitive to the Be content in the alloy. Be atoms occupy the Zn lattice sites at low Be content, but move partly to the interstitial sites with increasing Be content. We also investigated the thermal stability of N, one of the most frequently used p-type dopants, in the BexZn1-xO films. Secondary ion mass spectrometry shows that Be element plays a crucial role in stabilizing N in the BexZn1-xO host, which is favourable in improving the solid solubility and the thermal stability of acceptor dopants in ZnO-based wide-gap semiconductors.

引用

页数：4

共 26 条

[1] On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112 [J].

Barnes, TM ;

Olson, K ;

Wolden, CA .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[2]

Baron T, 1998, J CRYST GROWTH, V184, P415, DOI 10.1016/S0022-0248(98)80087-0

[3] ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer [J].

Chen, Mingming ;

Zhang, Quanlin ;

Su, Longxing ;

Su, Yuquan ;

Cao, Jiashi ;

Zhu, Yuan ;

Wu, Tianzhun ;

Gui, Xuchun ;

Yang, Chunlei ;

Xiang, Rong ;

Tang, Zikang .

MATERIALS RESEARCH BULLETIN, 2012, 47 (09) :2673-2675

[4] Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide [J].

Cox, SFJ ;

Davis, EA ;

Cottrell, SP ;

King, PJC ;

Lord, JS ;

Gil, JM ;

Alberto, HV ;

Vilao, RC ;

Duarte, JP ;

de Campos, NA ;

Weidinger, A ;

Lichti, RL ;

Irvine, SJC .

PHYSICAL REVIEW LETTERS, 2001, 86 (12) :2601-2604

[5] Theoretical study of BexZn1-xO alloys [J].

Ding, S. F. ;

Fan, G. H. ;

Li, S. T. ;

Chen, K. ;

Xiao, B. .

PHYSICA B-CONDENSED MATTER, 2007, 394 (01) :127-131

[6] A direct first principles study on the structure and electronic properties of BexZn1-xO [J].

Fan, X. F. ;

Zhu, Zexuan ;

Ong, Yew-Soon ;

Lu, Y. M. ;

Shen, Z. X. ;

Kuo, Jer-Lai .

APPLIED PHYSICS LETTERS, 2007, 91 (12)

[7] Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO [J].

Fons, P ;

Tampo, H ;

Kolobov, AV ;

Ohkubo, M ;

Niki, S ;

Tominaga, J ;

Carboni, R ;

Boscherini, F ;

Friedrich, S .

PHYSICAL REVIEW LETTERS, 2006, 96 (04)

[8] Effect on nitrogen acceptor as Mg is alloyed into ZnO [J].

Gai, Y. Q. ;

Yao, B. ;

Wei, Z. P. ;

Li, Y. F. ;

Lu, Y. M. ;

Shen, D. Z. ;

Zhang, J. Y. ;

Zhao, D. X. ;

Fan, X. W. ;

Li, Jingbo ;

Xia, Jian-Bai .

APPLIED PHYSICS LETTERS, 2008, 92 (06)

[9] Hydrogen: A relevant shallow donor in zinc oxide [J].

Hofmann, DM ;

Hofstaetter, A ;

Leiter, F ;

Zhou, HJ ;

Henecker, F ;

Meyer, BK ;

Orlinskii, SB ;

Schmidt, J ;

Baranov, PG .

PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4

[10] Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE [J].

Iwata, K ;

Fons, P ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :526-531

← 1 2 3 →