A Vertical Power MOSFET With an Interdigitated Drift Region Using High-k Insulator

被引：83
作者：
Chen, Xingbi [1 ,2 ]
Huang, Mingmin [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Chinese Acad Sci, Beijing 100864, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 09期
关键词：
Drift region; electrical characteristics; high-k (Hk); power MOSFET; specific ON-resistance;
D O I：
10.1109/TED.2012.2204890
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A vertical power MOSFET with an interdigitated drift region using high-k (Hk) insulator (Hk-MOSFET) is studied. Due to the fact that most of the electric displacement lines produced by the charges of the depleted drift region under reverse bias are through the Hk insulator, much heavier doping concentration can be used in the drift region when comparing with a conventional MOSFET with the same breakdown voltage. It is shown that the specific ON-resistance of the Hk-MOSFET is comparable to that of the superjunction MOSFET (SJ-MOSFET) with the same breakdown voltage. The turn-on and turn-off times are found to be little longer than those of the conventional MOSFET and the SJ-MOSFET. The theoretical results of the electrical characteristics are in good agreement with the results from numerical simulations.
引用
收藏
页码：2430 / 2437
页数：8
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