Two-dimensional topological insulator state in double HgTe quantum well

被引：16

作者：

Gusev, G. M. ^{[1
]}

Olshanetsky, E. B. ^{[2
]}

Hernandez, F. G. G. ^{[1
]}

Raichev, O. E. ^{[3
]}

Mikhailov, N. N. ^{[2
]}

Dvoretsky, S. A. ^{[2
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-13596017 Sao Paulo, SP, Brazil

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

[3] NAS Ukraine, Inst Semicond Phys, Prospekt Nauki 41, UA-03028 Kiev, Ukraine

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 24期

基金：

巴西圣保罗研究基金会;

关键词：

Quantum theory - Electric insulators - Mercury compounds - Topological insulators - Tellurium compounds - Semiconductor quantum wells;

D O I：

10.1103/PhysRevB.101.241302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.

引用

页数：5

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