GaN-on-Si laser diode: open up a new era of Si-based optical interconnections

被引：7
作者：
Li, Dabing [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
来源：
SCIENCE BULLETIN | 2016年 / 61卷 / 22期
关键词：
SILICON;
D O I：
10.1007/s11434-016-1192-x
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
[No abstract available]
引用
收藏
页码：1723 / 1725
页数：3
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