GaN-on-Si laser diode: open up a new era of Si-based optical interconnections

被引：7

作者：

Li, Dabing ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

来源：

SCIENCE BULLETIN | 2016年 / 61卷 / 22期

关键词：

SILICON;

D O I：

10.1007/s11434-016-1192-x

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

[No abstract available]

引用

页码：1723 / 1725

页数：3

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