Structural characterization of through silicon vias

被引：5

作者：

Bender, H. ^{[1
]}

Drijbooms, C. ^{[1
]}

Van Marcke, P. ^{[1
]}

Geypen, J. ^{[1
]}

Philipsen, H. G. G. ^{[1
]}

Radisic, A. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

JOURNAL OF MATERIALS SCIENCE | 2012年 / 47卷 / 18期

关键词：

Ion beams - High resolution transmission electron microscopy - Scanning electron microscopy - Three dimensional integrated circuits - Electronics packaging - Integrated circuit interconnects;

D O I：

10.1007/s10853-010-5144-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Different milling strategies for the structural characterization of through silicon vias on silicon wafers and in stacked dies are examined. For investigation of the filling quality, the most appropriate analysis technique is dual beam focused ion beam and scanning electron microscopy. The characterization of thin barriers and Cu seed layers requires transmission electron microscopy. An optimized TEM specimen preparation method is discussed.

引用

页码：6497 / 6504

页数：8

共 12 条

[1]

[Anonymous], MICROELECTR IN PRESS

[2]

[Anonymous], 1999, P P 25 INT S TEST FA

[3]

Beyne E., 2006, P IEEE INT INTERCONN, P1

[4]

Giannuzzi L. A., 2005, Introduction to focused ion beams: instrumentation, theory, techniques and practice

[5]

Gounet Pascal, 2009, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), P94, DOI 10.1109/IPFA.2009.5232689

[6] Transmission electron microscopy specimen preparation perpendicular to the long axis of high aspect ratio features [J].

Irwin, R. B. ;

Anciso, A. ;

Jones, P. J. ;

Glenn, A. L. ;

Williams, B. L. ;

Sridhar, S. ;

Arshad, S. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (06) :1352-1359

[7] First Integration of Cu TSV Using Die-to-Wafer Direct Bonding and Planarization [J].

Leduc, Patrick ;

Assous, Myriam ;

Di Cioccio, Lea ;

Zussy, Marc ;

Signamarcheix, Thomas ;

Roman, Antonio ;

Rousseau, Maxime ;

Verrun, Sophie ;

Bally, Laurent ;

Bouchu, David ;

Cadix, Lionel ;

Farcy, Alexis ;

Sillon, Nicolas .

2009 IEEE INTERNATIONAL CONFERENCE ON 3D SYSTEMS INTEGRATION, 2009, :1-+

[8] Monitoring the Superfilling of Blind Holes with Electrodeposited Copper [J].

Luhn, O. ;

Radisic, A. ;

Van Hoof, C. ;

Ruythooren, W. ;

Celis, J. -P. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) :D242-D247

[9] 3-D Technology Assessment: Path-Finding the Technology/Design Sweet-Spot [J].

Marchal, Paul ;

Bougard, Bruno ;

Katti, Guruprasad ;

Stucchi, Michele ;

Dehaene, Wim ;

Papanikolaou, Antonis ;

Verkest, Diederik ;

Swinnen, Bart ;

Beyne, Eric .

PROCEEDINGS OF THE IEEE, 2009, 97 (01) :96-107

[10]

Radisic A, 2009, MATER RES SOC SYMP P, V1112, P159

← 1 2 →