Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

被引：63
作者：
Guo, XY
Rowland, LB
Dunne, GT
Fronheiser, JA
Sandvik, PM
Beck, AL
Campbell, JC [1 ]
机构：
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[2] GE Global Res Ctr, Niskayuna, NY 12309 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期
关键词：
avalanche photodiodes (APDs); silicon carbide (SiC); ultraviolet (UV);
D O I：
10.1109/LPT.2005.860384
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.
引用
收藏
页码：136 / 138
页数：3
相关论文
共 10 条
[1]  
Baliga B. J., 1995, Power semiconductor devices (general engineering)
[2]   Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain [J].
Guo, XY ;
Beck, AL ;
Campbell, JC ;
Emerson, D ;
Sumakeris, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (10) :1213-1216
[3]  
KAMIYAMA H, COMMUNICATION
[4]   Ionization rates and critical fields in 4H silicon carbide [J].
Konstantinov, AO ;
Wahab, Q ;
Nordell, N ;
Lindefelt, U .
APPLIED PHYSICS LETTERS, 1997, 71 (01) :90-92
[5]   Calculation of gain and noise with dead space for GaAs and AlxGa1-xAs avalanche photodiode [J].
Li, XW ;
Zheng, XG ;
Wang, SL ;
Ma, F ;
Campbell, JC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) :1112-1117
[6]   Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes [J].
Ng, BK ;
Yan, F ;
David, JPR ;
Tozer, RC ;
Rees, GJ ;
Qin, C ;
Zhao, JH .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (09) :1342-1344
[7]  
Powell AR, 2004, MATER RES SOC SYMP P, V815, P3
[8]   Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å [J].
Sridhara, SG ;
Devaty, RP ;
Choyke, WJ .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2963-2964
[9]   A novel technology for the formation of a very small bevel angle for edge termination [J].
Yan, F ;
Qin, C ;
Zhao, JH .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1305-1308
[10]   4H-SiC visible blind UV avalanche photodiode [J].
Yan, F ;
Luo, Y ;
Zhao, JH ;
Olsen, GH .
ELECTRONICS LETTERS, 1999, 35 (11) :929-930
1