Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm

We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm(2)/V.s, sheet carrier density improved from 0.87x10(13) to 1.15x10(13) cm(-2), edge dislocation density reduced from 2.4x10(9) to 1.3x10(9) cm(-2), saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V.