Electronic and elemental properties of the Cu2ZnSn(S,Se)4 surface and grain boundaries

被引：81

作者：

Haight, Richard ^{[1
]}

Shao, Xiaoyan ^{[1
]}

Wang, Wei ^{[1
]}

Mitzi, David B. ^{[1
]}

机构：

[1] IBM T J Watson Res Ctr, New York, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期

关键词：

FILM SOLAR-CELLS; SILICON; DEFECTS; CZTS;

D O I：

10.1063/1.4862791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray and femtosecond UV photoelectron spectroscopy, secondary ion mass spectrometry and photoluminescence imaging were used to investigate the electronic and elemental properties of the CZTS, Se surface and its oxides. Oxide removal reveals a very Cu poor and Zn rich surface relative to bulk composition. O and Na are observed at the surface and throughout the bulk. Upward bending of the valence bands indicates the presence of negative charge in the surface region and the Fermi level is found near the band gap center. The presence of point defects and the impact of these findings on grain boundary properties will be described. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 16 条

[1]

Bär M, 2011, APPL PHYS LETT, V99, DOI [10.1063/1.3637574, 10.1063/1.3663327]

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