Thermoelectric Power of Different Phases and States of Silicon at High Pressure

被引:4
作者
Shchennikov, V. V. [1 ]
Shchennikov, Vs. V. [2 ]
Streltsov, S. V. [1 ]
Korobeynikov, I. V. [1 ]
Ovsyannikov, S. V. [3 ,4 ]
机构
[1] Russian Acad Sci, Inst Met Phys, Urals Div, Ekaterinburg 620990, Russia
[2] Russian Acad Sci, Urals Div, Inst Engn Sci, Ekaterinburg 620219, Russia
[3] Univ Bayreuth, Bayer Geoinst, D-5447 Bayreuth, Germany
[4] Russian Acad Sci, Inst Solid State Chem, Urals Div, Ekaterinburg 620990, Russia
基金
俄罗斯基础研究基金会;
关键词
Thermoelectricity; phases of Si; high pressure; defect-impurity structure of Si; SEMICONDUCTOR-METAL TRANSITION; CZOCHRALSKI-GROWN SILICON; P-T PRETREATMENT; 30; GPA; SI; THERMOPOWER; TRANSFORMATIONS; NANOWIRES; CRYSTALS; POINT;
D O I
10.1007/s11664-013-2602-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The thermoelectric properties of silicon in its high-pressure and metastable (upon decompression) phases in the pressure range up to similar to 25 GPa were investigated. Experimental data were obtained using designed high-pressure cells with sintered diamond anvils. Band-structure calculations based on density functional theory were performed to explain the thermoelectric properties. In particular, it has been established that the nonnegligible positive values of the thermoelectric power S found for the high-pressure "metal" phases of silicon may be well explained by s-d electron scattering. Qualitative agreement between the experimental data and the results of the calculations has been achieved for the known silicon polymorphs named Si-III, Si-V, and Si-XI.
引用
收藏
页码:2249 / 2256
页数:8
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