Combinatorial Composition Films and Dielectric Properties of BaxSr1-xTiO3 Grown on Two-Inch p-Si using PLD Process

被引：2
作者：
Abdel-Motaleb, Ibrahim M. [1 ]
Navuduri, Praveen [1 ]
Yoo, Young-Zo [2 ]
Chmaissem, Omar [2 ]
Song, Jeong-Hwan [3 ]
机构：
[1] No Illinois Univ, Dept Elect Engn, De Kalb, IL 60115 USA
[2] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA
[3] PaiChai Univ, Dept Informat & Elect Mat Engn, Taejon 302735, South Korea
来源：
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2013年 / 10卷
关键词：
BA0.6SR0.4TIO3; THIN-FILMS; BST; DEPOSITION;
D O I：
10.1111/ijac.12096
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Combinatorial composition films of BaxSr1-xTiO3 were grown on two-inch p-Si by pulsed laser deposition. Large areas of six different combinatorial composition films were grown on the same wafer using three primary target materials. Consequently, the deposition of Ba0.5Sr0.5TiO3 films was obtained from targets BaTiO3 and SrTiO3, the deposition of Ba0.3Sr0.7TiO3 films was obtained from targets SrTiO3 and Ba0.6Sr0.4TiO3, and the Ba0.8Sr0.2TiO3 film was obtained from targets Ba0.6Sr0.4TiO3 and BaTiO3. The results indicate that the deposited materials are perovskite structures with high dielectric constants ranging from 49.4 to 193.2 and leakage current densities as low as 1.25x10(-7)A/cm(2) at -2V.
引用
收藏
页码：E159 / E166
页数：8
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