High-resolution x-ray diffraction study of In0.25Ga0.75Sb/InAs superlattice

被引：5
作者：
Vigliante, A [1 ]
Homma, H [1 ]
Zborowski, JT [1 ]
Golding, TD [1 ]
Moss, SC [1 ]
机构：
[1] Univ Houston, Dept Phys, Houston, TX 77204 USA
来源：
JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 05期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1557/JMR.1999.0236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An In0.25Ga0.75Sb/InAs strained-layer superlattice, grown by molecular-beam epitaxy (MBE) on a GaSb[001] substrate, has been characterized by four-circle x-ray diffractometry. This system, proposed by Maliot and Smith for ir detection application, is challenging because of the two group V species and the likelihood of cross-incorporation of the different elements during growth, leading possibly to interdiffusion and thus, to a more diffuse interface. High-resolution x-ray diffraction (XRD) profiles were obtained about several reciprocal lattice points in order to extract a reliable set of structural parameters. The profiles were then successfully modeled by computer simulation. The presence of many sharp higher-order satellite reflections in the XRD profiles is a measure of the high quality of the superlattices. The normal and lateral structural coherence was also measured and will be discussed.
引用
收藏
页码：1744 / 1751
页数：8
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